Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides

We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed a...

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Bibliographic Details
Published in2d materials Vol. 4; no. 2; pp. 21003 - 21008
Main Authors Molas, M R, Faugeras, C, Slobodeniuk, A O, Nogajewski, K, Bartos, M, Basko, D M, Potemski, M
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2017
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Summary:We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed at   50 meV below the bright exciton peak and displays a characteristic doublet structure whose intensity grows with B2, while no magnetic field induced emission peaks appear for MoSe2 monolayer. Our experiments also show that the MoS2 monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of   100 meV.
Bibliography:2DM-101197
ISSN:2053-1583
2053-1583
DOI:10.1088/2053-1583/aa5521