Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOS

• Published in: Discover nano Vol. 19; no. 1; pp. 113 - 13
• Main Authors: Lin, Jyi-Tsong, Xie, Pei-Zhang, Lee, Wei-Han
• Format: Journal Article
• Language: English
• Published: New York Springer US 06.07.2024; Springer Nature B.V; Springer
• Subjects: Chemistry and Materials Science; CMOS; Delay time; Hole mobility; Materials Science; Metal oxide semiconductors; Microwave circuits; Molecular Medicine; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Noise margin; Punch-through effect; Single-carrier CMOS; Sizing; Static power dissipation; Delay time; Static power dissipation; Single-carrier CMOS; Noise margin; Punch-through effect; Hole mobility

In this paper, we propose the use of punch-through nMOS (PTnMOS) as an alternative to pMOS in complementary metal oxide semiconductor (CMOS) circuits. According to the TCAD simulation results, PTnMOS exhibit sub-threshold characteristics similar to those of pMOS and can be formed by simply changing...