Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOS

• Published in: Discover nano Vol. 19; no. 1; pp. 113 - 13
• Main Authors: Lin, Jyi-Tsong, Xie, Pei-Zhang, Lee, Wei-Han
• Format: Journal Article
• Language: English
• Published: New York Springer US 06.07.2024; Springer Nature B.V; Springer
• Subjects: Chemistry and Materials Science; CMOS; Delay time; Hole mobility; Materials Science; Metal oxide semiconductors; Microwave circuits; Molecular Medicine; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Noise margin; Punch-through effect; Single-carrier CMOS; Sizing; Static power dissipation; Delay time; Static power dissipation; Single-carrier CMOS; Noise margin; Punch-through effect; Hole mobility
• ISSN: 2731-9229; 1931-7573; 2731-9229; 1556-276X
• DOI: 10.1186/s11671-024-04064-y

In this paper, we propose the use of punch-through nMOS (PTnMOS) as an alternative to pMOS in complementary metal oxide semiconductor (CMOS) circuits. According to the TCAD simulation results, PTnMOS exhibit sub-threshold characteristics similar to those of pMOS and can be formed by simply changing the doping concentration of the source and drain. Without the need for sizing, which solves the area occupation problem caused by the need to increase the width of pMOS due to insufficient hole mobility. In addition, we compose a PTnMOS and nMOS without sizing to form a single-carrier CMOS in which only electrons are transmitted, and We extract its performance for comparison with conventional CMOS (W p /W n  = 1). The results indicate that single-carrier CMOS has symmetric noise margin and 29% faster delay time compared to conventional CMOS (W p /W n  = 1). If III–V or II–VI group materials could be applied to single-carrier CMOS, not only could costs be reduced and wafer area occupancy minimized, but also significant improvements in the performance and bandwidth application of microwave circuits could be achieved.