Preparation and reactive applications of nanoporous silicon carbide membranes

• Published in: Chemical engineering science Vol. 59; no. 22; pp. 4957 - 4965
• Main Authors: Ciora, Richard J., Fayyaz, Babak, Liu, Paul K.T., Suwanmethanond, Varaporn, Mallada, Reyes, Sahimi, Muhammad, Tsotsis, Theodore T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.11.2004; Elsevier
• Subjects: Applied sciences; Catalytic membrane reactor; Chemical engineering; Exact sciences and technology; Membranes; Reactors; Silicon carbide; Steam reforming; Membranes; Steam reforming; Silicon carbide; Catalytic membrane reactor; Membrane reactor; Porous membrane; Water gas; Preparation; Infiltration; Dip coating; Water vapor; Ceramic materials; Chemical vapor deposition; Precursor
• ISSN: 0009-2509; 1873-4405
• DOI: 10.1016/j.ces.2004.07.015

SiC nanoporous membranes have been prepared by chemical-vapor deposition/chemical-vapor infiltration of two different precursors, namely tri-isopropylsilane (TPS) and 1,3-disilabutane (DSB). Both precursors produce nanoporous membranes. The TPS-derived membranes are hydrothermally stable, while the DSB membranes produced, so far, are not. SiC nanoporous membranes have also been prepared by conventional dip-coating techniques using a novel pre-ceramic polymeric precursor allyl-hydridopolycarbosilane (AHPCS), a partially allyl-substituted hydridopolycarbosilane (HPCS). These membranes are stable in air-treatment at 450 °C, but have, so far, also proven unstable to high-temperature steam. The nanoporous hydrogen selective SiC membranes show promise for application in membrane reactors for the water gas shift and steam reforming reactions.