Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

•High benefits in-situ SiN capping layer on AlN to prevent from surface degradation.•Partial pressure of ammonia strongly impact Rsheet mobility and charge density.•We find Gallium content into AlN layer according to process condition. In this work we have studied the growth of AlN barriers on GaN c...

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Bibliographic Details
Published inJournal of crystal growth Vol. 515; pp. 48 - 52
Main Authors Kanyandekwe, Joël, Baines, Yannick, Richy, Jérôme, Favier, Sylvie, Leroux, Charles, Blachier, Denis, Mazel, Yann, Veillerot, Marc, Barnes, Jean-Paul, Mrad, Mrad, Wiese, Cindy, Charles, Matthew
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.06.2019
Elsevier BV
Elsevier
Subjects
AlN
Aluminum nitride
Ammonia
Barrier layers
Capping
Engineering Sciences
Free surfaces
Gallium nitrides
GaN
Heterostructures
Metalorganic chemical vapor deposition
MOVPE
Partial pressure
Rsheet
SiN
Thin films
Vapor phase epitaxy
SiN
AlN
MOVPE
GaN
Rsheet
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Summary:•High benefits in-situ SiN capping layer on AlN to prevent from surface degradation.•Partial pressure of ammonia strongly impact Rsheet mobility and charge density.•We find Gallium content into AlN layer according to process condition. In this work we have studied the growth of AlN barriers on GaN channels by Metal-Organic Vapor Phase Epitaxy (MOVPE). We have shown that an SiN in-situ capping layer is critical on AlN barrier layers. In addition, we have shown that an extreme reduction of NH3 partial pressure results in gallium incorporation into the layers around 22%. However, we have shown that lesser reductions of NH3 partial pressure allow us to achieve thin (3 nm) AlN layers capped with SiN which have a high quality crack free surface and state of the art Rsheet values <330 Ohm/sq for such thin layers.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2019.03.007