CNTFET-Based Design of Ternary Logic Gates and Arithmetic Circuits
This paper presents a novel design of ternary logic gates using carbon nanotube (CNT) FETs (CNTFETs). Ternary logic is a promising alternative to the conventional binary logic design technique, since it is possible to accomplish simplicity and energy efficiency in modern digital design due to the re...
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Published in | IEEE transactions on nanotechnology Vol. 10; no. 2; pp. 217 - 225 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.03.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper presents a novel design of ternary logic gates using carbon nanotube (CNT) FETs (CNTFETs). Ternary logic is a promising alternative to the conventional binary logic design technique, since it is possible to accomplish simplicity and energy efficiency in modern digital design due to the reduced circuit overhead such as interconnects and chip area. A resistive-load CNTFET-based ternary logic design has been proposed to implement ternary logic based on CNTFET. In this paper, a novel design technique for ternary logic gates based on CNTFETs is proposed and compared with the existing resistive-load CNTFET logic gate designs. Especially, the proposed ternary logic gate design technique combined with the conventional binary logic gate design technique provides an excellent speed and power consumption characteristics in datapath circuit such as full adder and multiplier. Extensive simulation results using SPICE are reported to show that the proposed ternary logic gates consume significantly lower power and delay than the previous resistive-load CNTFET gates implementations. In realistic circuit application, the utilization of the proposed ternary gates combined with binary gates results in over 90% reductions in terms of the power delay product. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 content type line 23 |
ISSN: | 1536-125X 1941-0085 |
DOI: | 10.1109/TNANO.2009.2036845 |