Effect of Spin-Glass Ordering on Conduction in a-Si1-cMnc near the Metal-Insulator Transition

The electrical conductivity and magnetoresistance of amorphous Si films implanted by Mn ions up to a concentration of 22 at% are investigated near the metal–insulator transition (MIT). We find that there is a characteristic temperature TSG = 6 to 20 K (dependent on the Mn concentration) which separa...

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Bibliographic Details
Published inphysica status solidi (b) Vol. 205; no. 1; pp. 299 - 303
Main Authors Yakimov, A. I., Dvurechenskii, A. V., Adkins, C. J.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.01.1998
WILEY‐VCH Verlag
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