Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

• Published in: physica status solidi (b) Vol. 216; no. 1; pp. 471 - 476
• Main Authors: Holst, J., Hoffmann, A., Broser, I., Rudloff, D., Bertram, F., Riemann, T., Christen, J., Frey, T., As, D.J., Schikora, D., Lischka, K.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.1999; WILEY‐VCH Verlag
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/(SICI)1521-3951(199911)216:1<471::AID-PSSB471>3.0.CO;2-O

The structural and the optical properties of cubic GaInN MBE‐grown on GaAs substrates are investigated using scanning electron‐ and cathodoluminescence microscopy, time‐resolved and time‐integrated photoluminescence spectroscopy as well as gain measurements at 2 K and 300 K. The In content is ranging from 3% to 30%. From the carrier dynamics localized states are proposed to be responsible as recombination mechanism. From temperature‐ and intensity‐dependent gain measurements, the identification of the gain processes was possible. Optical gain values up to 60 cm—1 were observed at wavelengths up to 500 nm, indicating the advantage of this material system due to the lack of detrimental pyro‐ and piezoelectric fields. The degree of In fluctuations directly determines the optical quality and the efficiency of optical amplification of the samples.