Observation of Quantum-Dot-Like Properties in the Phase-Separated GaN-Rich GaNP

• Published in: physica status solidi (b) Vol. 216; no. 1; pp. 461 - 464
• Main Authors: Kuroiwa, R., Asahi, H., Iwata, K., Tampo, H., Asami, K., Gonda, S.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.1999; WILEY‐VCH Verlag
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/(SICI)1521-3951(199911)216:1<461::AID-PSSB461>3.0.CO;2-S

GaN‐rich GaNP ternary alloy layers are grown by gas source molecular beam epitaxy. Beyond an average P composition of 0.015, phase separation is observed. For the phase‐separated samples, quantum‐dot‐like photoluminescence (PL) properties are observed for the first time. The PL peak energy shows a large red‐shift, which comes from the phase‐separated GaP‐rich GaPN cluster regions. The PL spectrum shows multiple peak structures and its main peak moves with increasing temperature from one peak to another toward lower energy. Energy separations between them are 30 to 50 meV.