Development of high-power OPCPA laser at 1064 and 780 nm

A compact 10-TW/100-fs level ultrashort-pulse and ultra-intense laser system at 1064 nm based on optical parametric chirped pulse amplification (OPCPA) scheme is described, at which the pump and seed for the optical parametric amplification (OPA) process is optically synchronized. We investigated th...

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Published inIEEE journal of selected topics in quantum electronics Vol. 12; no. 2; pp. 187 - 193
Main Authors Yuxin Leng, Xiaoyang Liang, Baozhen Zhao, Cheng Wang, Yongliang Jiang, Xiaodong Yang, Lu, H., Lihuang Lin, Zhengquan Zhang, Ruxin Li, Zhizhan Xu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:A compact 10-TW/100-fs level ultrashort-pulse and ultra-intense laser system at 1064 nm based on optical parametric chirped pulse amplification (OPCPA) scheme is described, at which the pump and seed for the optical parametric amplification (OPA) process is optically synchronized. We investigated the output stability and the conversion efficiency of the system. Moreover, a design toward higher peak power output is given and an optically synchronized amplifier based on the concept of OPCPA at 800 nm is preliminarily explored.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2006.872060