Development of high-power OPCPA laser at 1064 and 780 nm
A compact 10-TW/100-fs level ultrashort-pulse and ultra-intense laser system at 1064 nm based on optical parametric chirped pulse amplification (OPCPA) scheme is described, at which the pump and seed for the optical parametric amplification (OPA) process is optically synchronized. We investigated th...
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Published in | IEEE journal of selected topics in quantum electronics Vol. 12; no. 2; pp. 187 - 193 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.03.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A compact 10-TW/100-fs level ultrashort-pulse and ultra-intense laser system at 1064 nm based on optical parametric chirped pulse amplification (OPCPA) scheme is described, at which the pump and seed for the optical parametric amplification (OPA) process is optically synchronized. We investigated the output stability and the conversion efficiency of the system. Moreover, a design toward higher peak power output is given and an optically synchronized amplifier based on the concept of OPCPA at 800 nm is preliminarily explored. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2006.872060 |