Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications

• Published in: IEEE transactions on electron devices Vol. 50; no. 3; pp. 633 - 644
• Main Authors: Bonani, F., Guerrieri, S.D., Ghione, G.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuits; Devices; Equivalent circuits; Joints; Noise; Oscillators; Radio frequencies; Semiconductor device modeling; Semiconductor device noise; Simulation; Strategy; Stresses; UHF devices
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2003.810477

The paper presents a review on physics-based noise simulation techniques for RF semiconductor devices, starting with the small-signal case but with greater stress on noise in large-signal (quasi)-periodic operation. The nonautonomous (forced) operation case will be considered, which is relevant to all RF applications apart from oscillators. Besides their importance in device design, physics-based noise models can also suggest viable and correct strategies to implement circuit-oriented models, e.g., compact models. From this standpoint, the connection between physics-based and circuit-oriented modeling is discussed both in the small-signal and in the large-signal case, with particular stress on the treatment of colored noise in the large-signal periodic regime.