Excimer Laser Surface Patterning for Photoluminescence Enhancement of Silicon Nanocrystals

A method for enhancing the photoluminescence of silicon nanocrystals in a silicon oxide matrix by fabrication of periodic surface structures through laser irradiation is demonstrated. ArF excimer lasers are used to produce periodic line structures by material ablation. Photoluminescence, Raman, and...

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Bibliographic Details
Published inPhotonics Vol. 10; no. 4; p. 358
Main Authors Richter, Lukas Janos, Ross, Ulrich, Seibt, Michael, Ihlemann, Jürgen
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.04.2023
Subjects
Ablative materials
Annealing
Crystals
Efficiency
excimer laser
Excimer lasers
Excimers
Fabrication
High temperature
Hydrogen
Irradiation
Lasers
Light
Luminescence
Microscopy
Nanocrystals
Nanoparticles
Nitrogen
Photoluminescence
Photons
Si-nanocrystal
Silicon
Silicon oxide
Silicon oxides
Silicon wafers
Surface structure
TEM
Topography
Transmission electron microscopes
Germany
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Summary:A method for enhancing the photoluminescence of silicon nanocrystals in a silicon oxide matrix by fabrication of periodic surface structures through laser irradiation is demonstrated. ArF excimer lasers are used to produce periodic line structures by material ablation. Photoluminescence, Raman, and transmission electron microscope measurements consistently show the formation of crystalline silicon after high-temperature annealing. A 2.6-fold enhancement of photoluminescence signal is measured for a periodic line structure with 600 nm period. The influence of a surface structure on the photoluminescence from the silicon oxide layer is discussed in terms of a simple model describing the main effect.
ISSN:2304-6732
2304-6732
DOI:10.3390/photonics10040358