Negative Differential Resistance of Graphene Oxide/Sulphur Compound

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron micr...

Full description

Saved in:
Bibliographic Details
Published inJournal of nano research Vol. 67; pp. 25 - 31
Main Authors Abaszade, Rashad G., Figarova, Sophia R., Alekberov, R.I., Figarov, Vagif R., Aliyev, Elvin M.
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 27.04.2021
Subjects
Chemical composition
Chemical synthesis
Crystallites
Current carriers
Current voltage characteristics
Functional groups
Graphene
Raman spectroscopy
Room temperature
Sulfur compounds
Hummers’ Method
Sulphur
Graphene Oxide
Hopping Tunneling
Negative Differential Resistance
Online AccessGet full text

Cover

More Information
Summary:Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.
ISSN:1662-5250
1661-9897
1661-9897
DOI:10.4028/www.scientific.net/JNanoR.67.25