Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture

Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions...

Full description

Saved in:
Bibliographic Details
Published inMaterials Vol. 13; no. 13; p. 2907
Main Authors G. S. Santos, João, Correa, Marcio A., Ferreira, Armando, R. Carvalho, Bruno, B. da Silva, Rodolfo, Bohn, Felipe, Lanceiros-Méndez, Senendxu, Vaz, Filipe
Format Journal Article
LanguageEnglish
Published MDPI 29.06.2020
MDPI AG
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1996-1944
1996-1944
DOI:10.3390/ma13132907