Dielectric functions of Si nanoparticles within a silicon nitride matrix

• Published in: Physica status solidi. C Vol. 7; no. 2; pp. 418 - 422
• Main Authors: Keita, A.-S., Naciri, A. En, Delachat, F., Carrada, M., Ferblantier, G., Slaoui, A.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2010; WILEY‐VCH Verlag; Wiley Subscription Services, Inc; Wiley
• Subjects: 78.20.Ci; 78.66.Sq; 78.67.Bf; 78.68.+m; Ammonia; Dielectrics; Effective medium theory; Mathematical analysis; Mathematical models; Nanoparticles; Parametric amplifiers; Physical properties; Plasma enhanced chemical vapor deposition; Quantum confinement; Reproduction; Silicon; Silicon nitride; Spectroellipsometry
• ISSN: 1862-6351; 1610-1642; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200982461

We report on the study of the influence of ammonia flow on physical properties of Plasma Enhanced Chemical Vapor Deposition (PECV)‐grown silicon nanoparticles (np‐Si) within a silicon nitride matrix. To achieve this goal, we have used spectroscopic ellipsometry (SE) to determine the np‐Si dielectric functions (DFs). On the one hand, the DF have been modeled using single parametric oscillators given by Tauc‐Lorentz and Forouhi‐Bloomer dispersion models. On the other hand, wavelength‐by‐wavelength numerical inversion, carried out without considering any fitting parameter, have represented another way to derive the DFs of the np‐Si. Besides a comparison has been done between results given by Bruggeman Effective Medium Approximation (BEMA) and Maxwell‐Garnett law. The results have shown that SE can be used to find out the band gap and mean size of np‐Si according to quantum confinement theory. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)