Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers
This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof...
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Published in | Journal of microelectromechanical systems Vol. 18; no. 3; pp. 671 - 678 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2009
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof mass are composed of a 1-mum-thick piezoelectric AlN layer. Utilizing piezoelectric coupling for the resonator drive and sense, DETFs at 890 kHz have been realized with quality factors ( Q ) of 5090 and a maximum power handling of 1 muW. The linear drive of the piezoelectric coupling reduces upconversion of 1/ f amplifier noise into 1/ f 3 phase noise close to the oscillator carrier. This results in lower oscillator phase noise, -96 dBc/Hz at 100-Hz offset from the carrier, and improved sensor resolution when the DETF resonators are oscillated by the readout electronics. Attached to a 110-ng proof mass, the accelerometer microsystem has a measured sensitivity of 3.4 Hz/G and a resolution of 0.9 mG/radicHz from 10 to 200 Hz, where the accelerometer bandwidth is limited by the measurement setup. Theoretical calculations predict an upper limit on the accelerometer bandwidth of 1.4 kHz. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1057-7157 1941-0158 |
DOI: | 10.1109/JMEMS.2009.2020374 |