Classification and control of the origin of photoluminescence from Si nanocrystals
Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they ari...
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| Published in | Nature nanotechnology Vol. 3; no. 3; pp. 174 - 178 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
01.03.2008
Nature Publishing Group |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again. |
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| AbstractList | Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again. Silicon dominates the electronics industry, but its poor optical properties mean that III-V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.Silicon dominates the electronics industry, but its poor optical properties mean that III-V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again. |
| Author | Hayne, M. Jivanescu, M. Stesmans, A. Lebedev, O. I. Godefroo, S. Van Tendeloo, G. Moshchalkov, V. V. Zacharias, M. |
| Author_xml | – sequence: 1 givenname: S. surname: Godefroo fullname: Godefroo, S. organization: INPAC-Institute for Nanoscale Physics and Chemistry, Pulsed Field Group, K.U.Leuven – sequence: 2 givenname: M. surname: Hayne fullname: Hayne, M. email: m.hayne@lancaster.ac.uk organization: INPAC-Institute for Nanoscale Physics and Chemistry, Pulsed Field Group, K.U.Leuven, Department of Physics, Lancaster University – sequence: 3 givenname: M. surname: Jivanescu fullname: Jivanescu, M. organization: INPAC-Institute for Nanoscale Physics and Chemistry, Semiconductor Physics Laboratory, K.U.Leuven – sequence: 4 givenname: A. surname: Stesmans fullname: Stesmans, A. organization: INPAC-Institute for Nanoscale Physics and Chemistry, Semiconductor Physics Laboratory, K.U.Leuven – sequence: 5 givenname: M. surname: Zacharias fullname: Zacharias, M. organization: Institute of Microsystems Engineering, Albert Ludwigs University Freiburg – sequence: 6 givenname: O. I. surname: Lebedev fullname: Lebedev, O. I. organization: EMAT, University of Antwerp (RUCA) – sequence: 7 givenname: G. surname: Van Tendeloo fullname: Van Tendeloo, G. organization: EMAT, University of Antwerp (RUCA) – sequence: 8 givenname: V. V. surname: Moshchalkov fullname: Moshchalkov, V. V. organization: INPAC-Institute for Nanoscale Physics and Chemistry, Pulsed Field Group, K.U.Leuven |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/18654491$$D View this record in MEDLINE/PubMed |
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| Snippet | Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications.... Silicon dominates the electronics industry, but its poor optical properties mean that III-V compound semiconductors are preferred for photonics applications.... |
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| SubjectTerms | Chemistry and Materials Science Crystallization - methods Electronics industry Hydrogen - chemistry Luminescent Measurements - methods Macromolecular Substances - chemistry Magnetic fields Magnetics Materials Science Materials Testing Molecular Conformation Nanocrystals Nanostructures - chemistry Nanostructures - radiation effects Nanotechnology Nanotechnology - methods Nanotechnology and Microengineering Optical properties Particle Size Scattering, Radiation Silicon Silicon - chemistry Surface Properties Wavelengths |
| Title | Classification and control of the origin of photoluminescence from Si nanocrystals |
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