Classification and control of the origin of photoluminescence from Si nanocrystals

Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they ari...

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Published inNature nanotechnology Vol. 3; no. 3; pp. 174 - 178
Main Authors Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lebedev, O. I., Van Tendeloo, G., Moshchalkov, V. V.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.03.2008
Nature Publishing Group
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Summary:Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.
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ISSN:1748-3387
1748-3395
1748-3395
DOI:10.1038/nnano.2008.7