Subsurface damage from helium ions as a function of dose, beam energy, and dose rate

In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this article, the authors will consider helium ion induced damage thresholds as compared to...

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Bibliographic Details
Published inJournal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Vol. 27; no. 6; pp. 3244 - 3249
Main Authors Livengood, Richard, Tan, Shida, Greenzweig, Yuval, Notte, John, McVey, Shawn
Format Journal Article
LanguageEnglish
Published American Vacuum Society 01.11.2009
Subjects
Helium Ion
Gallium
Implant Damage
Sub-surface damage
Focused Ion Beam
Helium
Helium Ion Microscope
Silicon dislocations
FIB
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Summary:In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this article, the authors will consider helium ion induced damage thresholds as compared to other more traditional charged-particle-beam technologies, as a function of dose, dose rate, and beam energy, and describe potential applications operating regimes.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3237101