On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

• Published in: AIP advances Vol. 7; no. 3; pp. 035121 - 035121-5
• Main Authors: Mi, Hongyi, Yuan, Hao-Chih, Seo, Jung-Hun, Auciello, Orlando H., Mancini, Derrick C., Carpick, Robert W., Pacheco, Sergio P., Sumant, Anirudha V., Ma, Zhenqiang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.03.2017; AIP Publishing LLC
• Subjects: CMOS; Deposition; Diamond films; Diamonds; Digital cameras; MATERIALS SCIENCE; MOS devices; Nanoelectromechanical systems; Threshold voltage; Transconductance
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4979480

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency f T and maximum oscillation frequency f max. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.