Recent progress in red light-emitting diodes by III-nitride materials

Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue an...

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Published inSemiconductor science and technology Vol. 37; no. 1; pp. 13001 - 13029
Main Authors Iida, Daisuke, Ohkawa, Kazuhiro
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.2022
Subjects
full width at half maximum
InGaN
metalorganic vapor-phase epitaxy
peak wavelength shift
red light-emitting diodes
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Abstract Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.
AbstractList Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.
Author Iida, Daisuke
Ohkawa, Kazuhiro
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  surname: Iida
  fullname: Iida, Daisuke
  organization: King Abdullah University of Science and Technology (KAUST) Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Thuwal 23955-6900, Saudi Arabia
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  givenname: Kazuhiro
  orcidid: 0000-0002-8728-3503
  surname: Ohkawa
  fullname: Ohkawa, Kazuhiro
  organization: King Abdullah University of Science and Technology (KAUST) Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Thuwal 23955-6900, Saudi Arabia
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Snippet Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be...
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SubjectTerms full width at half maximum
InGaN
metalorganic vapor-phase epitaxy
peak wavelength shift
red light-emitting diodes
Title Recent progress in red light-emitting diodes by III-nitride materials
URI https://iopscience.iop.org/article/10.1088/1361-6641/ac3962
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