Recent progress in red light-emitting diodes by III-nitride materials

• Published in: Semiconductor science and technology Vol. 37; no. 1; pp. 13001 - 13029
• Main Authors: Iida, Daisuke, Ohkawa, Kazuhiro
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.01.2022
• Subjects: full width at half maximum; InGaN; metalorganic vapor-phase epitaxy; peak wavelength shift; red light-emitting diodes
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/1361-6641/ac3962

Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.