Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers
An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm 2 · V -1 · s -1 field-effect mobility (μ FE ) and a 1.57-V threshold voltage (V TH ) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) lay...
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Published in | IEEE electron device letters Vol. 33; no. 6; pp. 818 - 820 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2012
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm 2 · V -1 · s -1 field-effect mobility (μ FE ) and a 1.57-V threshold voltage (V TH ) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The μ FE is about 2.3 times higher than that of a GIZO TFT, and the V TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2012.2190036 |