Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

• Published in: IEEE electron device letters Vol. 33; no. 6; pp. 818 - 820
• Main Authors: Park, Jae Chul, Lee, Ho-Nyeon
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2012; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous semiconductors; Applied sciences; Circuit stability; Electronics; Exact sciences and technology; Finite element method; Insulators; Iron; Lighting; Logic gates; Oxides; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Stability; Stress; Thin film transistors; thin-film transistors (TFTs); Transistors; Performance evaluation; Voltage threshold; Semiconductor thin films; Oxide layer; Stacking; Amorphous semiconductors; Gallium oxide; Active layer; Indium oxide; thin-film transistors (TFTs); Zinc oxide; Thin film transistor; Double layers
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2190036

An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm 2 · V -1 · s -1 field-effect mobility (μ FE ) and a 1.57-V threshold voltage (V TH ) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The μ FE is about 2.3 times higher than that of a GIZO TFT, and the V TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.