Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure

The ability to controllably manipulate complex topological polar configurations such as polar flux-closures via external stimuli may allow the construction of new electromechanical and nanoelectronic devices. Here, using atomically resolved in situ scanning transmission electron microscopy, we find...

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Published inProceedings of the National Academy of Sciences - PNAS Vol. 117; no. 32; pp. 18954 - 18961
Main Authors Li, Xiaomei, Tan, Congbing, Liu, Chang, Gao, Peng, Sun, Yuanwei, Chen, Pan, Li, Mingqiang, Liao, Lei, Zhu, Ruixue, Wang, Jinbin, Zhao, Yanchong, Wang, Lifen, Xu, Zhi, Liu, Kaihui, Zhong, Xiangli, Wang, Jie, Bai, Xuedong
Format Journal Article
LanguageEnglish
Published Washington National Academy of Sciences 11.08.2020
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Summary:The ability to controllably manipulate complex topological polar configurations such as polar flux-closures via external stimuli may allow the construction of new electromechanical and nanoelectronic devices. Here, using atomically resolved in situ scanning transmission electron microscopy, we find that the polar fluxclosures in PbTiO₃/SrTiO₃ superlattice films are mobile and can be reversibly switched to ordinary single ferroelectric c or a domains under an applied electric field or stress. Specifically, the electric field initially drives movement of a flux-closure via domain wall motion and then breaks it to form intermediate a/c striped domains, whereas mechanical stress first squeezes the core of a flux-closure toward the interface and then form a/c domains with disappearance of the core. After removal of the external stimulus, the flux-closure structure spontaneously recovers. These observations can be precisely reproduced by phase field simulations, which also reveal the evolutions of the competing energies during phase transitions. Such reversible switching between flux-closures and ordinary ferroelectric states provides a foundation for potential electromechanical and nanoelectronic applications.
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1X.L., C.T., and C.L. contributed equally to this work.
Author contributions: C.T., P.G., and X.B. designed research; X.L., C.T., C.L., Y.S., P.C., M.L., L.L., Jinbin Wang, X.Z., and Jie Wang performed research; Z.X. contributed new reagents/analytic tools; X.L. and P.G. analyzed data; C.T., C.L.,Y.S., R.Z., Y.Z., L.W., K.L., Jie Wang, and X.B. assisted with data analysis; and X.L., R.Z., and P.G. wrote the paper with contributions from C.T., C.L., Jie Wang, and X.B.
Edited by S.-W. Cheong, Rutgers University, Piscataway, NJ, and accepted by Editorial Board Member Zachary Fisk June 22, 2020 (received for review April 16, 2020)
ISSN:0027-8424
1091-6490
DOI:10.1073/pnas.2007248117