Microstructure of III-N semiconductors related to their applications in optoelectronics

• Published in: Physica status solidi. C Vol. 2; no. 4; pp. 1366 - 1373
• Main Authors: Leszczynski, M., Czernetzki, R., Sarzynski, M., Krysko, M., Targowski, G., Prystawko, P., Bockowski, M., Grzegory, I., Suski, T., Domagala, J., Porowski, S.
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 01.01.2005; WILEY‐VCH Verlag
• Subjects: 42.55.Px; 68.55.Jk; 81.05.Ea; 85.60.Jb
• ISSN: 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200460459

There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III‐N semiconductors in relation with their microstructure. The following devices are presented: i) Low‐power green and blue LEDs, ii) High‐power LEDs targeting solid‐state white lighting, iii) Low‐power violet LDs for high definition DVD market, iv) High‐power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III‐N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)