Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

• Published in: IEEE transactions on electron devices Vol. 58; no. 10; pp. 3566 - 3573
• Main Authors: Kim, Hee-Dong, An, Ho-Myoung, Lee, Eui Bok, Kim, Tae Geun
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum; aluminum nitride (AlN); Applied sciences; Atomic force microscopy (AFM); Atomic measurements; Current density; Data storage; Design. Technologies. Operation analysis. Testing; Devices; Electron traps; Electronics; Endurance; Exact sciences and technology; High speed; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Memory devices; Pulse measurements; Random access memory; Reliability; resistive switching (RS); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; space-charge-limited conduction (SCLC); Storage and reproduction of information; Switches; Switching; Temperature measurement; Memory devices; Atomic force microscopy; Atomic force microscopy (AFM); Binary compound; Random access memory; Aluminium nitride; Retention factor; Aluminium; III-V compound; Switching; space-charge-limited conduction (SCLC); Space charge limited conduction; Non volatile memory; Integrated circuit; Electrical conductivity transitions; resistive switching (RS); aluminum nitride (AIN); Ultrafast process
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2162518

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 μA and 5 nA, respectively, at V read = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over ~ 10 8 cycles and a retention time of over ten years at 85°C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.