Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through origi...

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Published inIEEE transactions on device and materials reliability Vol. 4; no. 3; pp. 377 - 389
Main Authors Barbara De Salvo, Gerardi, C., van Schaijk, R., Lombardo, S.A., Corso, D., Plantamura, C., Serafino, S., Ammendola, G., van Duuren, M., Goarin, P., Mei, W.Y., van der Jeugd, K., Baron, T., Gely, M., Mur, P., Deleonibus, S.
Format Magazine Article
LanguageEnglish
Published New York IEEE 01.09.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Application specific integrated circuits
Devices
Flash
Guidelines
Material storage
Nanocrystals
nonvolatile memories (NVMs)
Nonvolatile memory
Production
Random access memory
reliability
Silicon
silicon nanocrystals
SONOS
SONOS devices
Technology forecasting
Trends
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Summary:In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2004.837209