Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through origi...
Saved in:
Published in | IEEE transactions on device and materials reliability Vol. 4; no. 3; pp. 377 - 389 |
---|---|
Main Authors | , , , , , , , , , , , , , , , |
Format | Magazine Article |
Language | English |
Published |
New York
IEEE
01.09.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1530-4388 1558-2574 |
DOI: | 10.1109/TDMR.2004.837209 |