Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Vol. 26; no. 6; pp. L45 - L47
• Main Authors: Wei, Xing, Wu, Ai Min, Chen, Meng, Chen, Jing, Zhang, Miao, Wang, Xi, Lin, Cheng Lu
• Format: Journal Article
• Language: English
• Published: American Vacuum Society 01.11.2008
• Subjects: Oxide; Silicon on Insulator; Silicon

In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding tech...