Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer

In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding tech...

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Bibliographic Details
Published inJournal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Vol. 26; no. 6; pp. L45 - L47
Main Authors Wei, Xing, Wu, Ai Min, Chen, Meng, Chen, Jing, Zhang, Miao, Wang, Xi, Lin, Cheng Lu
Format Journal Article
LanguageEnglish
Published American Vacuum Society 01.11.2008
Subjects
Oxide
Silicon on Insulator
Silicon
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Summary:In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding technique and etch-stop thinning process. Spectroscopic ellipsometry indicated a thin-film SOI with the device layer of 147.5 ± 3.1 nm . An atomic-scale sharp interface between the device layer and buried oxide layer was observed by high-resolution transmission electron microscopy.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2990785