Fabrication of thin-film silicon on insulator by separation by implanted oxygen layer transfer
In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding tech...
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| Published in | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Vol. 26; no. 6; pp. L45 - L47 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
American Vacuum Society
01.11.2008
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| Subjects | |
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| Abstract | In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding technique and etch-stop thinning process. Spectroscopic ellipsometry indicated a thin-film SOI with the device layer of
147.5
±
3.1
nm
. An atomic-scale sharp interface between the device layer and buried oxide layer was observed by high-resolution transmission electron microscopy. |
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| AbstractList | In this article, the authors propose an improved approach—separation by implanted oxygen (SIMOX) layer transfer process—to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding technique and etch-stop thinning process. Spectroscopic ellipsometry indicated a thin-film SOI with the device layer of 147.5±3.1nm. An atomic-scale sharp interface between the device layer and buried oxide layer was observed by high-resolution transmission electron microscopy. In this article, the authors propose an improved approach-separation by implanted oxygen (SIMOX) layer transfer process-to fabricate thin-film silicon on insulator (SOI). The top Si layer, a low-dose SIMOX wafer, was transferred upside down onto a thermally oxidized Si handle wafer by a bonding technique and etch-stop thinning process. Spectroscopic ellipsometry indicated a thin-film SOI with the device layer of 147.5 ± 3.1 nm . An atomic-scale sharp interface between the device layer and buried oxide layer was observed by high-resolution transmission electron microscopy. |
| Author | Zhang, Miao Wei, Xing Wu, Ai Min Chen, Meng Lin, Cheng Lu Chen, Jing Wang, Xi |
| Author_xml | – sequence: 1 givenname: Xing surname: Wei fullname: Wei, Xing organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 2 givenname: Ai Min surname: Wu fullname: Wu, Ai Min organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 3 givenname: Meng surname: Chen fullname: Chen, Meng organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 4 givenname: Jing surname: Chen fullname: Chen, Jing organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 5 givenname: Miao surname: Zhang fullname: Zhang, Miao organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 6 givenname: Xi surname: Wang fullname: Wang, Xi organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China – sequence: 7 givenname: Cheng Lu surname: Lin fullname: Lin, Cheng Lu organization: State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Keywords | Oxide Silicon on Insulator Silicon |
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