Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets

• Published in: Journal of materials science. Materials in electronics Vol. 29; no. 10; pp. 7931 - 7940
• Main Authors: Qin, Kai, Mei, Fangsheng, Yuan, Tiechui, Li, Ruidi, Jiang, Jun, Niu, Pengda, Chen, Hui
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2018; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Cooling rate; Electrical resistivity; Heating rate; Indium oxides; Materials Science; Optical and Electronic Materials; Process parameters; Review; Sintering; Thermal decomposition; Tin dioxide

The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O...