Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets

• Published in: Journal of materials science. Materials in electronics Vol. 29; no. 10; pp. 7931 - 7940
• Main Authors: Qin, Kai, Mei, Fangsheng, Yuan, Tiechui, Li, Ruidi, Jiang, Jun, Niu, Pengda, Chen, Hui
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2018; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Cooling rate; Electrical resistivity; Heating rate; Indium oxides; Materials Science; Optical and Electronic Materials; Process parameters; Review; Sintering; Thermal decomposition; Tin dioxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-018-8843-4

The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In 2 O 3 and SnO 2 .