Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets
The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O...
Saved in:
Published in | Journal of materials science. Materials in electronics Vol. 29; no. 10; pp. 7931 - 7940 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
01.05.2018
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In
2
O
3
and SnO
2
. |
---|---|
AbstractList | The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In
2
O
3
and SnO
2
. The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In2O3 and SnO2. |
Author | Chen, Hui Qin, Kai Li, Ruidi Jiang, Jun Mei, Fangsheng Yuan, Tiechui Niu, Pengda |
Author_xml | – sequence: 1 givenname: Kai surname: Qin fullname: Qin, Kai organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 2 givenname: Fangsheng surname: Mei fullname: Mei, Fangsheng organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 3 givenname: Tiechui surname: Yuan fullname: Yuan, Tiechui email: tiechuiyuan@csu.edu.cn organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 4 givenname: Ruidi surname: Li fullname: Li, Ruidi email: liruidi@csu.edu.cn organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 5 givenname: Jun surname: Jiang fullname: Jiang, Jun organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 6 givenname: Pengda surname: Niu fullname: Niu, Pengda organization: State Key Laboratory of Powder Metallurgy, Central South University – sequence: 7 givenname: Hui surname: Chen fullname: Chen, Hui organization: State Key Laboratory of Powder Metallurgy, Central South University |
BookMark | eNp1kE1LAzEQhoNUsFV_gLeAV1cnX7vJUUrVQqEHK3gQwjadtFvabE3Sg__erSt48jTD8D4zwzMig9AGJOSGwT0DqB4SA61kAUwXWktRyDMyZKrqGs3fB2QIRlWFVJxfkFFKWwAopdBD8jHxHl1OtPU0NSFjbMKaHmLrMCXsxoHmDVLc4R5Dpm6D-8bVO5pynfGHmoY7-hpoHVZ0TptAp4s5zXVcY05X5NzXu4TXv_WSvD1NFuOXYjZ_no4fZ4WTzOSCg5BMGCGYLiXnlfeSC64AhHbSr7RjNVOmKpGB8s5pXTpnlgaWhnthgIlLctvv7f7-PGLKdtseY-hOWg5MlUKxCroU61MutilF9PYQm30dvywDe5Joe4m2k2hPEq3sGN4z6XASg_Fv8__QN5Amc6c |
CitedBy_id | crossref_primary_10_1016_j_cplett_2022_139743 crossref_primary_10_1007_s10854_023_11565_6 crossref_primary_10_1016_j_scriptamat_2018_09_009 crossref_primary_10_1007_s10853_019_04108_0 crossref_primary_10_1016_j_ces_2021_117165 crossref_primary_10_1016_j_seppur_2023_123104 crossref_primary_10_1080_21870764_2022_2073646 crossref_primary_10_1021_acsami_0c17326 crossref_primary_10_1016_j_ceramint_2024_07_078 crossref_primary_10_3389_fmats_2020_00113 |
Cites_doi | 10.1016/j.ceramint.2007.02.015 10.1016/j.tsf.2010.03.166 10.1143/JJAP.40.3332 10.1016/j.biortech.2017.06.033 10.1016/j.ceramint.2016.08.157 10.1016/j.ceramint.2017.04.021 10.1063/1.1367897 10.1016/j.jallcom.2016.12.234 10.1016/j.apsusc.2011.09.081 10.1063/1.336958 10.1111/j.1551-2916.2011.04999.x 10.1016/j.jallcom.2017.06.007 10.1063/1.1312847 10.1016/j.msec.2005.10.078 10.1016/j.jeurceramsoc.2017.09.008 10.1016/j.tsf.2010.03.041 10.1111/j.1151-2916.1966.tb13289.x 10.1016/j.mseb.2003.09.046 10.1016/S0040-6090(98)00959-6 10.1016/j.enconman.2014.08.068 |
ContentType | Journal Article |
Copyright | Springer Science+Business Media, LLC, part of Springer Nature 2018 Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved. |
Copyright_xml | – notice: Springer Science+Business Media, LLC, part of Springer Nature 2018 – notice: Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2018). All Rights Reserved. |
DBID | AAYXX CITATION 7SP 7SR 8BQ 8FD 8FE 8FG ABJCF AFKRA ARAPS BENPR BGLVJ CCPQU D1I DWQXO F28 FR3 HCIFZ JG9 KB. L7M P5Z P62 PDBOC PQEST PQQKQ PQUKI PRINS S0W |
DOI | 10.1007/s10854-018-8843-4 |
DatabaseName | CrossRef Electronics & Communications Abstracts Engineered Materials Abstracts METADEX Technology Research Database ProQuest SciTech Collection ProQuest Technology Collection Materials Science & Engineering Collection ProQuest Central Advanced Technologies & Aerospace Collection ProQuest Central Technology Collection ProQuest One Community College ProQuest Materials Science Collection ProQuest Central ANTE: Abstracts in New Technology & Engineering Engineering Research Database SciTech Premium Collection (Proquest) (PQ_SDU_P3) Materials Research Database Materials Science Database Advanced Technologies Database with Aerospace Advanced Technologies & Aerospace Database ProQuest Advanced Technologies & Aerospace Collection Materials Science Collection ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Academic ProQuest One Academic UKI Edition ProQuest Central China DELNET Engineering & Technology Collection |
DatabaseTitle | CrossRef Materials Research Database Technology Collection Technology Research Database ProQuest Advanced Technologies & Aerospace Collection Materials Science Collection SciTech Premium Collection ProQuest One Community College ProQuest Central China ProQuest Central Engineered Materials Abstracts ProQuest Central Korea Materials Science Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering ProQuest Materials Science Collection Advanced Technologies & Aerospace Collection ProQuest One Academic Eastern Edition Electronics & Communications Abstracts ProQuest Technology Collection ProQuest SciTech Collection METADEX Advanced Technologies & Aerospace Database ProQuest One Academic UKI Edition ProQuest DELNET Engineering and Technology Collection Materials Science & Engineering Collection Engineering Research Database ProQuest One Academic |
DatabaseTitleList | Materials Research Database |
Database_xml | – sequence: 1 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1573-482X |
EndPage | 7940 |
ExternalDocumentID | 10_1007_s10854_018_8843_4 |
GroupedDBID | -4Y -58 -5G -BR -EM -Y2 -~C -~X .4S .86 .DC .VR 06C 06D 0R~ 0VY 199 1N0 1SB 2.D 203 28- 29L 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 406 408 409 40D 40E 5GY 5QI 5VS 67Z 6NX 78A 8FE 8FG 8UJ 95- 95. 95~ 96X AAAVM AABHQ AABYN AAFGU AAGCJ AAHNG AAIAL AAIKT AAJKR AANZL AARHV AARTL AATNV AATVU AAUCO AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABBBX ABBXA ABDZT ABECU ABFGW ABFTD ABFTV ABHLI ABHQN ABJCF ABJNI ABJOX ABKAS ABKCH ABKTR ABMNI ABMQK ABNWP ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACTTH ACVWB ACWMK ADHHG ADHIR ADINQ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEEQQ AEFIE AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AENEX AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AFEXP AFGCZ AFKRA AFLOW AFNRJ AFQWF AFWTZ AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJGSW AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARAPS ARCSS ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. BA0 BBWZM BDATZ BENPR BGLVJ BGNMA CAG CCPQU COF CS3 CSCUP D1I DDRTE DL5 DNIVK DPUIP DU5 EBLON EBS EDO EIOEI EJD ESBYG FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC G-Y G-Z G8K GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 GQ8 GXS HCIFZ HF~ HG5 HG6 HMJXF HQYDN HRMNR HVGLF HZ~ I-F I09 IHE IJ- IKXTQ IWAJR IXC IXD IXE IZIGR IZQ I~X I~Y I~Z J-C J0Z JBSCW JCJTX JZLTJ KB. KDC KOV KOW LAK LLZTM M4Y MA- MK~ N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM OVD P0- P19 P2P P62 P9N PDBOC PT4 PT5 Q2X QF4 QM1 QN7 QO4 QOK QOR QOS R4E R89 R9I RHV RNI RNS ROL RPX RSV RZC RZE RZK S0W S16 S1Z S26 S27 S28 S3B SAP SCG SCLPG SCM SDH SDM SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPISZ SQXTU SRMVM SSLCW STPWE SZN T13 T16 TEORI TN5 TSG TSK TSV TUS U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W23 W48 W4F WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7V Z7W Z7X Z7Y Z7Z Z81 Z83 Z85 Z88 Z8M Z8N Z8P Z8R Z8T Z8W Z8Z Z92 ZMTXR ~EX AACDK AAEOY AAJBT AASML AAYXX ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AGJZZ AGQEE AGRTI AIGIU CITATION H13 7SP 7SR 8BQ 8FD AAYZH DWQXO F28 FR3 JG9 L7M PQEST PQQKQ PQUKI PRINS |
ID | FETCH-LOGICAL-c419t-2034139331864227ff423250038c4fd8c1a15976e105fcc886cc9b90b92f39013 |
IEDL.DBID | BENPR |
ISSN | 0957-4522 |
IngestDate | Wed Nov 06 08:25:35 EST 2024 Thu Sep 12 16:39:01 EDT 2024 Sat Dec 16 12:03:14 EST 2023 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 10 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c419t-2034139331864227ff423250038c4fd8c1a15976e105fcc886cc9b90b92f39013 |
PQID | 2015635170 |
PQPubID | 326250 |
PageCount | 10 |
ParticipantIDs | proquest_journals_2015635170 crossref_primary_10_1007_s10854_018_8843_4 springer_journals_10_1007_s10854_018_8843_4 |
PublicationCentury | 2000 |
PublicationDate | 2018-05-01 |
PublicationDateYYYYMMDD | 2018-05-01 |
PublicationDate_xml | – month: 05 year: 2018 text: 2018-05-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | Journal of materials science. Materials in electronics |
PublicationTitleAbbrev | J Mater Sci: Mater Electron |
PublicationYear | 2018 |
Publisher | Springer US Springer Nature B.V |
Publisher_xml | – name: Springer US – name: Springer Nature B.V |
References | Zhao, Li, Yang (CR10) 2017; 698 Besbes, Ouada, Davenas (CR7) 2006; 26 Kwok, Sun, Kim (CR22) 1998; 335 Sawada, Higuchi, Kondo, Saka (CR6) 2001; 40 Hamberg, Granqvist (CR20) 1986; 59 Kim, Jin, Kim (CR18) 2010; 518 Chen, Sun, Tay (CR21) 2004; 106 Min, Cho, Sang (CR8) 2011; 258 Taha, Henry, Yin (CR11) 2017; 721 Yu, Feng, Grozea, Lu (CR17) 2001; 78 Ghanizadeh, Peiris, Jayathilake (CR15) 2016; 42 Hu, Shi (CR23) 2001 Mei, Yuan, Li (CR9) 2018; 38 Mei, Yuan, Li (CR2) 2017; 28 Sharp, Brindley (CR26) 1966; 49 Wi, Woo, Um (CR14) 2010; 518 Gonzalez, Mason, Okasinski (CR5) 2011; 95 Crist (CR16) 2000 Christou, Etchells, Renault (CR19) 2000; 88 Löbmann (CR3) 2000; 25 Chen, Wang (CR25) 2017; 243 Mei, Yuan, Li (CR1) 2017; 43 Mei, Qin, Yuan (CR13) 2017; 28 Medvedovski, Alvarez (CR4) 2008; 34 Montesdeoca-Santana, Jiménez-Rodríguez, Marrero (CR12) 2010; 268 Du, Jiang (CR24) 2014; 88 M Sawada (8843_CR6) 2001; 40 S Ghanizadeh (8843_CR15) 2016; 42 E Medvedovski (8843_CR4) 2008; 34 HS Kwok (8843_CR22) 1998; 335 F Mei (8843_CR1) 2017; 43 P Löbmann (8843_CR3) 2000; 25 BJ Chen (8843_CR21) 2004; 106 Y Du (8843_CR24) 2014; 88 S Besbes (8843_CR7) 2006; 26 HY Yu (8843_CR17) 2001; 78 J Chen (8843_CR25) 2017; 243 GB Gonzalez (8843_CR5) 2011; 95 JH Wi (8843_CR14) 2010; 518 X Zhao (8843_CR10) 2017; 698 I Hamberg (8843_CR20) 1986; 59 BV Crist (8843_CR16) 2000 F Mei (8843_CR9) 2018; 38 H Taha (8843_CR11) 2017; 721 A Montesdeoca-Santana (8843_CR12) 2010; 268 F Mei (8843_CR13) 2017; 28 YJ Kim (8843_CR18) 2010; 518 JH Sharp (8843_CR26) 1966; 49 RZ Hu (8843_CR23) 2001 F Mei (8843_CR2) 2017; 28 HA Min (8843_CR8) 2011; 258 V Christou (8843_CR19) 2000; 88 |
References_xml | – volume: 34 start-page: 1173 year: 2008 end-page: 1182 ident: CR4 article-title: Advanced indium-tin oxide ceramics for sputtering targets publication-title: Ceram. Int doi: 10.1016/j.ceramint.2007.02.015 contributor: fullname: Alvarez – volume: 518 start-page: 6228 year: 2010 end-page: 6231 ident: CR14 article-title: Surface properties of etched ITO thin films using high density plasma publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.03.166 contributor: fullname: Um – volume: 40 start-page: 3332 year: 2001 end-page: 3336 ident: CR6 article-title: Characteristics of indium-tin-oxide/silver/indium-tin-oxide sandwich films and their application to simple-matrix liquid-crystal displays publication-title: Jpn. J. Appl. Phys doi: 10.1143/JJAP.40.3332 contributor: fullname: Saka – volume: 243 start-page: 37 year: 2017 end-page: 46 ident: CR25 article-title: Comparative evaluation of thermal oxidative decomposition for oil-plant residues via thermogravimetric analysis: thermal conversion characteristics, kinetics, and thermodynamics publication-title: Bioresour. Technol doi: 10.1016/j.biortech.2017.06.033 contributor: fullname: Wang – volume: 268 start-page: 374 year: 2010 end-page: 378 ident: CR12 article-title: XPS characterization of different thermal treatments in the ITO–Si interface of a carbonate-textured monocrystalline silicon solar cell publication-title: Methods Phys. Res., Sect. B contributor: fullname: Marrero – volume: 42 start-page: 18296 year: 2016 end-page: 18302 ident: CR15 article-title: Dispersion and microwave processing of nano-sized ITO powder for the fabrication of transparent conductive oxides publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2016.08.157 contributor: fullname: Jayathilake – volume: 43 start-page: 8866 year: 2017 end-page: 8872 ident: CR1 article-title: Effects of second-phase particles and elemental distributions of ITO targets on the properties of deposited ITO films publication-title: Ceram. Int doi: 10.1016/j.ceramint.2017.04.021 contributor: fullname: Li – volume: 28 start-page: 14711 year: 2017 end-page: 14719 ident: CR13 article-title: Effects of oxygen flow velocity on the sintering properties of ITO targets publication-title: J. Mater. Sci.: Mater. Electron contributor: fullname: Yuan – volume: 78 start-page: 2595 year: 2001 end-page: 2597 ident: CR17 article-title: Surface electronic structure of plasma-treated indium tin oxides publication-title: Appl. Phys. Lett doi: 10.1063/1.1367897 contributor: fullname: Lu – volume: 698 start-page: 147 year: 2017 end-page: 151 ident: CR10 article-title: Annealing effects in ITO based ceramic thin film thermocouples publication-title: J. Alloys Compd doi: 10.1016/j.jallcom.2016.12.234 contributor: fullname: Yang – volume: 258 start-page: 1242 year: 2011 end-page: 1248 ident: CR8 article-title: Effect of the duty ratio on the indium tin oxide (ITO) film deposited by in-line pulsed DC magnetron sputtering method for resistive touch panel publication-title: Appl. Surf. Sci doi: 10.1016/j.apsusc.2011.09.081 contributor: fullname: Sang – volume: 59 start-page: 2950 year: 1986 end-page: 2952 ident: CR20 article-title: Optical properties of transparent and heat-reflecting indium tin oxide films: refinements of a model for ionized impurity scattering publication-title: Jpn. J. Appl. Phys doi: 10.1063/1.336958 contributor: fullname: Granqvist – year: 2000 ident: CR16 publication-title: The Elements and Native Oxides contributor: fullname: Crist – volume: 95 start-page: 809 year: 2011 end-page: 815 ident: CR5 article-title: Determination of the solubility of tin in indium oxide using in situ and ex situ X-ray diffraction publication-title: J. Am. Ceram. Soc doi: 10.1111/j.1551-2916.2011.04999.x contributor: fullname: Okasinski – volume: 721 start-page: 333 year: 2017 end-page: 346 ident: CR11 article-title: Probing the effects of thermal treatment on the electronic structure and mechanical properties of Ti-doped ITO thin films publication-title: J. Alloys Compd doi: 10.1016/j.jallcom.2017.06.007 contributor: fullname: Yin – volume: 25 start-page: 15 year: 2000 end-page: 18 ident: CR3 article-title: Transparent conducting oxides publication-title: MRS Bull contributor: fullname: Löbmann – volume: 88 start-page: 5180 year: 2000 end-page: 5187 ident: CR19 article-title: High resolution X-ray photoemission study of plasma oxidation of indium-tin-oxide thin film surfaces publication-title: Jpn. J. Appl. Phys doi: 10.1063/1.1312847 contributor: fullname: Renault – volume: 28 start-page: 15996 year: 2017 end-page: 16007 ident: CR2 article-title: Effects of sintering processes on second-phase grain morphology of ITO ceramics and grain growth publication-title: J. Mater. Sci.: Mater. Electron contributor: fullname: Li – volume: 26 start-page: 505 year: 2006 end-page: 510 ident: CR7 article-title: Effect of surface treatment and functionalization on the ITO properties for OLEDs publication-title: Mater. Sci. Eng, C doi: 10.1016/j.msec.2005.10.078 contributor: fullname: Davenas – volume: 38 start-page: 521 year: 2018 end-page: 533 ident: CR9 article-title: Micro-structure of ITO ceramics sintered at different temperatures and its effect on the properties of deposited ITO films publication-title: J. Eur. Ceram. Soc doi: 10.1016/j.jeurceramsoc.2017.09.008 contributor: fullname: Li – volume: 518 start-page: 6241 year: 2010 end-page: 6244 ident: CR18 article-title: Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.03.041 contributor: fullname: Kim – volume: 49 start-page: 379 year: 1966 end-page: 382 ident: CR26 article-title: Numerical data for some commonly used solid state reaction equations publication-title: J. Am. Ceram. Soc doi: 10.1111/j.1151-2916.1966.tb13289.x contributor: fullname: Brindley – volume: 106 start-page: 300 year: 2004 end-page: 304 ident: CR21 article-title: Fabrication of ITO thin films by filtered cathodic vacuum arc deposition publication-title: Mater. Sci. Eng. B doi: 10.1016/j.mseb.2003.09.046 contributor: fullname: Tay – volume: 335 start-page: 1 year: 1998 end-page: 2 ident: CR22 article-title: Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms publication-title: Thin Solid Films doi: 10.1016/S0040-6090(98)00959-6 contributor: fullname: Kim – volume: 88 start-page: 459 year: 2014 end-page: 463 ident: CR24 article-title: Thermal behavior and kinetics of bio-ferment residue/coal blends during co-pyrolysis publication-title: Energy. Convers. Manage doi: 10.1016/j.enconman.2014.08.068 contributor: fullname: Jiang – start-page: 1 year: 2001 end-page: 40 ident: CR23 publication-title: Thermal Analysis Kinetics contributor: fullname: Shi – volume: 268 start-page: 374 year: 2010 ident: 8843_CR12 publication-title: Methods Phys. Res., Sect. B contributor: fullname: A Montesdeoca-Santana – volume: 26 start-page: 505 year: 2006 ident: 8843_CR7 publication-title: Mater. Sci. Eng, C doi: 10.1016/j.msec.2005.10.078 contributor: fullname: S Besbes – volume: 518 start-page: 6241 year: 2010 ident: 8843_CR18 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.03.041 contributor: fullname: YJ Kim – volume: 40 start-page: 3332 year: 2001 ident: 8843_CR6 publication-title: Jpn. J. Appl. Phys doi: 10.1143/JJAP.40.3332 contributor: fullname: M Sawada – start-page: 1 volume-title: Thermal Analysis Kinetics year: 2001 ident: 8843_CR23 contributor: fullname: RZ Hu – volume: 59 start-page: 2950 year: 1986 ident: 8843_CR20 publication-title: Jpn. J. Appl. Phys doi: 10.1063/1.336958 contributor: fullname: I Hamberg – volume: 106 start-page: 300 year: 2004 ident: 8843_CR21 publication-title: Mater. Sci. Eng. B doi: 10.1016/j.mseb.2003.09.046 contributor: fullname: BJ Chen – volume: 721 start-page: 333 year: 2017 ident: 8843_CR11 publication-title: J. Alloys Compd doi: 10.1016/j.jallcom.2017.06.007 contributor: fullname: H Taha – volume: 34 start-page: 1173 year: 2008 ident: 8843_CR4 publication-title: Ceram. Int doi: 10.1016/j.ceramint.2007.02.015 contributor: fullname: E Medvedovski – volume: 335 start-page: 1 year: 1998 ident: 8843_CR22 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(98)00959-6 contributor: fullname: HS Kwok – volume: 88 start-page: 5180 year: 2000 ident: 8843_CR19 publication-title: Jpn. J. Appl. Phys doi: 10.1063/1.1312847 contributor: fullname: V Christou – volume: 28 start-page: 15996 year: 2017 ident: 8843_CR2 publication-title: J. Mater. Sci.: Mater. Electron contributor: fullname: F Mei – volume: 42 start-page: 18296 year: 2016 ident: 8843_CR15 publication-title: Ceram. Int. doi: 10.1016/j.ceramint.2016.08.157 contributor: fullname: S Ghanizadeh – volume: 49 start-page: 379 year: 1966 ident: 8843_CR26 publication-title: J. Am. Ceram. Soc doi: 10.1111/j.1151-2916.1966.tb13289.x contributor: fullname: JH Sharp – volume: 698 start-page: 147 year: 2017 ident: 8843_CR10 publication-title: J. Alloys Compd doi: 10.1016/j.jallcom.2016.12.234 contributor: fullname: X Zhao – volume: 518 start-page: 6228 year: 2010 ident: 8843_CR14 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.03.166 contributor: fullname: JH Wi – volume: 78 start-page: 2595 year: 2001 ident: 8843_CR17 publication-title: Appl. Phys. Lett doi: 10.1063/1.1367897 contributor: fullname: HY Yu – volume: 258 start-page: 1242 year: 2011 ident: 8843_CR8 publication-title: Appl. Surf. Sci doi: 10.1016/j.apsusc.2011.09.081 contributor: fullname: HA Min – volume: 43 start-page: 8866 year: 2017 ident: 8843_CR1 publication-title: Ceram. Int doi: 10.1016/j.ceramint.2017.04.021 contributor: fullname: F Mei – volume-title: The Elements and Native Oxides year: 2000 ident: 8843_CR16 contributor: fullname: BV Crist – volume: 243 start-page: 37 year: 2017 ident: 8843_CR25 publication-title: Bioresour. Technol doi: 10.1016/j.biortech.2017.06.033 contributor: fullname: J Chen – volume: 25 start-page: 15 year: 2000 ident: 8843_CR3 publication-title: MRS Bull contributor: fullname: P Löbmann – volume: 95 start-page: 809 year: 2011 ident: 8843_CR5 publication-title: J. Am. Ceram. Soc doi: 10.1111/j.1551-2916.2011.04999.x contributor: fullname: GB Gonzalez – volume: 28 start-page: 14711 year: 2017 ident: 8843_CR13 publication-title: J. Mater. Sci.: Mater. Electron contributor: fullname: F Mei – volume: 88 start-page: 459 year: 2014 ident: 8843_CR24 publication-title: Energy. Convers. Manage doi: 10.1016/j.enconman.2014.08.068 contributor: fullname: Y Du – volume: 38 start-page: 521 year: 2018 ident: 8843_CR9 publication-title: J. Eur. Ceram. Soc doi: 10.1016/j.jeurceramsoc.2017.09.008 contributor: fullname: F Mei |
SSID | ssj0006438 |
Score | 2.279175 |
SecondaryResourceType | review_article |
Snippet | The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine... |
SourceID | proquest crossref springer |
SourceType | Aggregation Database Publisher |
StartPage | 7931 |
SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Cooling rate Electrical resistivity Heating rate Indium oxides Materials Science Optical and Electronic Materials Process parameters Review Sintering Thermal decomposition Tin dioxide |
SummonAdditionalLinks | – databaseName: SpringerLINK - Czech Republic Consortium dbid: AGYKE link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3NT8IwFG8QLnrw24ii6cGTOsK6bmuPxICgUQ5CgonJsnZtYkgKcXDxr_d1H4BfB65d95K91_fV995vCF3pgOow9JTDuPYcGseeE7sxpCos4b6QiSDKXg08PQe9EX0Y--MKIsurCzNplhXJzFCvzbox3zZMMIcxCmS3UK2YO621718fO0v7Cz6W5Qh7FtGbkLKW-ReR795oFWL-qIpmzqa7lw8AphlGoe0xmTQXc9GUn78RHDf4jn20W8SeuJ0flgNUUeYQ7awhEh6htxzNOMVTjVMLJWGX8SyfJlCwbDBEjFjlTedYFnADOJtLyt7qm1v8YnBsEjzA7wb3hwOct5unx2jU7Qzvek7xAwZHUpfPQYOsj-Me6D2kKSTU2pZ1fVtNlFQnTIJUISEJFARpWkrGAim54C3BibZ3Kd4JqpqpUacIs0C4gQYC1E2AFOVCusoVHmuBhYMgqI6uS0FEsxxnI1ohKluWRcCyyLIsgs2NUlRRoXJpROxQuOe7YauObkrWrx7_S-xso93naJtY2WUtjw1UnX8s1AWEJXNxWZzDL_b21UM priority: 102 providerName: Springer Nature |
Title | Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets |
URI | https://link.springer.com/article/10.1007/s10854-018-8843-4 https://www.proquest.com/docview/2015635170 |
Volume | 29 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5se9GD-MRqLXvwpAbyzuYkVfpSbEVbqCCEZLMLXrbV1P_vbHZjVNDrJhnCzO6851uAMxH6Ioo8btFYeJafpp6VOimGKjSPg4zlmctVauB-Eo7m_u0iWJiEW2HaKiudWCrqfMlUjhyDdIw0vMCJ7KvVm6VujVLVVXOFRgNaLkYKdhNa1_3Jw-OXLkZ7SzXankL3dt2qrqmH52igOjCoRamP__nTMtXu5q8KaWl4BjuwbTxG0tMi3oUNLvdg6xuO4D68aAzigiwFKRQAhFomKz0DwHFZEvTzCNet4oQZkABSThOVX43lJXmSJJU5mZJXScazKdFN4sUBzAf92c3IMtcmWMx34jXue2WZYg9PKwYXbiSEKsYGqgbIfJFThrLAMCLk6FoJxigNGYuz2M5iV6gMiHcITbmU_AgIDTMnFEjAd3Ik5ccZc7iTedRGvYSuSxvOK5YlK42OkdQ4yIq_CfI3UfxN8OVOxdTEHJQiqcXahouK0fXjP4kd_0_sBDZdJdmyM7EDzfX7Bz9F72GddaFBB8MutHrD57t-12wYXJ27vU_IRcFp |
link.rule.ids | 315,783,787,12777,21400,27936,27937,33385,33756,41093,41535,42162,42604,43612,43817,52123,52246,74369,74636 |
linkProvider | ProQuest |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV07T8MwELagDMCAeIpCAQ9MQKQmdhJ7QghRWuhjoJUYkKzYsSUWt5Dy_znHCQEkWJ3kFN3Z977PCJ2bhJo0JTpg3JCAZhkJsjCDUIXlPJYql5F2qYHROOnP6MNz_Fwl3IqqrbLWiaWizufK5cghSIdIg8Rh2r1evAXu1ihXXa2u0FhFa5SArXaT4r37L00M1pZ5rD2H7R1FdVXTj86x2PVfsIAxCn_50y41zuav-mhpdnrbaKvyF_GNF_AOWtF2F21-QxHcQy8egbjAc4MLB__glvHCTwBoWLYYvDysfaM4VhVEAC5nicqvBvYKP1mc2RxP8KvFg-kE-xbxYh_NenfT235QXZoQKBryJex6Z5c4gbMKoUWUGuNKsbGrACpqcqZAEhBEJBocK6MUY4lSXPKu5JFx-Q9ygFp2bvUhwiyRYWKAAA1zIEW5VKEOJWFd0ErguLTRRc0ysfDYGKJBQXb8FcBf4fgr4OVOzVRRHZNCNEJto8ua0c3jP4kd_U_sDK33p6OhGA7Gj8doI3JSLnsUO6i1fP_QJ-BHLOVpuVk-AZiRv5E |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NS8MwFA86QfQgfuJ0ag6e1OLapm1yElHr5scmuMEOQmjSBLx0087_35cmtSroNW0f5b3kfeT98gtCxzomOklC5VGmQ49kWehlfgalCs1ZJGQuAmW2Bh4HcW9M7ibRxOGfSgerrH1i5ajzqTR75FCkQ6URRn7SPdcOFvF0nV7M3jxzg5TptLrrNBbREkTF2Mxwmt5-eWWIvNTy7hme7yCoO5z2GB2NDBaDepQS-OOfMapJPH_1SqsQlK6jNZc74ktr7A20oIpNtPqNUXALvVg24hJPNS4NFYQZxjN7GkDBcIEh48PKgsaxdHQBuDpXVH3VL87wc4GzIsdD_Frg_miILVy83Ebj9GZ01fPcBQqeJD6bwwowMYqFsG6hzAgSrU1bNjLdQEl0TiVYBQqKWEGSpaWkNJaSCdYVLNBmLyTcQa1iWqhdhGks_FiDAOLnIIowIX3li5B2wUNBEtNGJ7XK-MzyZPCGEdnol4N-udEvh5c7tVK5WzIlbwzcRqe1opvHfwrb-1_YEVqGecIf-oP7fbQSGCNXcMUOas3fP9QBpBRzcVjNlU_WDsPP |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effects+of+sintering+processes+on+the+element+chemical+states+of+In%2C+Sn+and+O+in+ITO+targets&rft.jtitle=Journal+of+materials+science.+Materials+in+electronics&rft.au=Qin%2C+Kai&rft.au=Fangsheng+Mei&rft.au=Yuan%2C+Tiechui&rft.au=Li%2C+Ruidi&rft.date=2018-05-01&rft.pub=Springer+Nature+B.V&rft.issn=0957-4522&rft.eissn=1573-482X&rft.volume=29&rft.issue=10&rft.spage=7931&rft.epage=7940&rft_id=info:doi/10.1007%2Fs10854-018-8843-4&rft.externalDBID=HAS_PDF_LINK |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0957-4522&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0957-4522&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0957-4522&client=summon |