Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets

The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O...

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Published inJournal of materials science. Materials in electronics Vol. 29; no. 10; pp. 7931 - 7940
Main Authors Qin, Kai, Mei, Fangsheng, Yuan, Tiechui, Li, Ruidi, Jiang, Jun, Niu, Pengda, Chen, Hui
Format Journal Article
LanguageEnglish
Published New York Springer US 01.05.2018
Springer Nature B.V
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Abstract The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In 2 O 3 and SnO 2 .
AbstractList The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In 2 O 3 and SnO 2 .
The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine kinds of ITO targets were prepared in order to investigate the effects of sintering processes on the element chemical states of In, Sn and O in ITO targets by XPS. The results show that the heating rate of 60 °C/h, the sintering temperature of 1580 °C, the holding time of 5 h and the cooling rate of 240 °C/h are favorable for the preparation of ITO targets with the optimum conductivity. The change rule of the element chemical states of In, Sn and O in ITO targets sintered with different sintering process parameters has been proved by the theoretical analysis of thermal decomposition kinetics of In2O3 and SnO2.
Author Chen, Hui
Qin, Kai
Li, Ruidi
Jiang, Jun
Mei, Fangsheng
Yuan, Tiechui
Niu, Pengda
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  organization: State Key Laboratory of Powder Metallurgy, Central South University
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  organization: State Key Laboratory of Powder Metallurgy, Central South University
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Snippet The element chemical states of In, Sn and O could affect the resistivity of ITO targets so as to affect the electrical property of ITO films. In the work, nine...
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SubjectTerms Characterization and Evaluation of Materials
Chemistry and Materials Science
Cooling rate
Electrical resistivity
Heating rate
Indium oxides
Materials Science
Optical and Electronic Materials
Process parameters
Review
Sintering
Thermal decomposition
Tin dioxide
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Title Effects of sintering processes on the element chemical states of In, Sn and O in ITO targets
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