Characterization of Silver Trimethylacetate Complexes with Tertiary Phosphines as CVD Precursors of Thin Silver Films

• Published in: Chemical vapor deposition Vol. 11; no. 1; pp. 53 - 59
• Main Authors: Piszczek, P., Szłyk, E., Chaberski, M., Taeschner, C., Leonhardt, A., Bała, W., Bartkiewicz, K.
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 01.01.2005; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Precursors; Silver; Thin films; Temperature dependence; Scanning electron microscopy; Inorganic compounds; Electrical conductivity; Transition element compounds; Optical emission spectroscopy; Crystal growth from vapors; XRD; Experimental study; Hot wire; Precursor; Silver layers conductivity; Silver films; Structure of films; Thin films; CVD; Silver; Silver carboxylate and tertiary phosphine precursors; Transition elements; Silver complexes; Phosphines; X-ray photoelectron spectra
• ISSN: 0948-1907; 1521-3862
• DOI: 10.1002/cvde.200406323

AgI complexes [Ag(O2CtBu)(PMe3)] (1) and [Ag(O2CtBu)(PEt3)] (2) were used as CVD precursors. Silver films between 30 nm and 100 nm were deposited from the above compounds using hot‐wall and cold‐wall CVD techniques on Si(111) and Si(100) substrates in the temperature range 180‐220 °C, under the reactor pressure 1–3 mbar. Metallic films were characterized by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), and conductivity measurements. AgI complexes [Ag(O2CtBu) (PMe3)] (1) and [Ag(O2CtBu)(PEt3)] (2) were used as CVD precursors for deposition of silver films between 30 nm and 100 nm thick using hot‐wall and cold‐wall CVD techniques on Si(111) and Si(100) substrates (Figure). Metallic films were characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, scanning electron microscopy, and conductivity measurements.