A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $\mu$ m SiGe BiCMOS

This letter presents a 200 GHz amplifier for low-power high data-rate wireless communications. With large bandwidth and energy efficiency as concurrent goals, cascode stages for high power gain and dual-band matching networks to maximize the bandwidth have been employed. The resulting amplifier has...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 24; no. 11; pp. 790 - 792
Main Authors Fritsche, David, Carta, Corrado, Ellinger, Frank
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Amplification
Amplifiers
Bandwidth
Circuits
Compressing
Gain
Noise levels
Silicon germanides
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Summary:This letter presents a 200 GHz amplifier for low-power high data-rate wireless communications. With large bandwidth and energy efficiency as concurrent goals, cascode stages for high power gain and dual-band matching networks to maximize the bandwidth have been employed. The resulting amplifier has been implemented in a 450 GHz SiGe BiCMOS technology, requiring a circuit area of only 800 mu m 300 mu m. The characterized circuit exhibits 16.9 dB of maximum power gain, 44 GHz of bandwidth and - 3.5 dBm of output power at 1 dB compression, while requiring only 18 mW of DC-power.
Bibliography:ObjectType-Article-1
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ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2014.2350691