Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping

• Published in: IEEE transactions on electron devices Vol. 58; no. 8; pp. 2743 - 2751
• Main Authors: Wirth, G. I., da Silva, R., Kaczer, B.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bias; Bias temperature instability (BTI); Charge; Charge carrier processes; charge trapping; Computer simulation; Devices; Electronics; Equations; Exact sciences and technology; Mathematical analysis; Mathematical model; Mathematical models; Monte Carlo methods; Monte Carlo simulation; performance degradation (aging); random telegraph signal (RTS); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stress; Studies; Temperature measurement; Threshold voltage; Transistors; Trapping; Thermal stress; Performance evaluation; Monte Carlo method; MOSFET; Bias temperature instability; Ageing; Random telegraph noise; performance degradation (aging); random telegraph signal (RTS); Switching; Bias temperature instability (BTI); Time dependence; Charge carrier trapping; Statistical model; Analytical method; Numerical simulation; MOS transistor; Reliability; Damaging; charge trapping
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2157828

Bias temperature instability (BTI) is a serious reliability concern for MOS transistors. This paper covers theoretical analysis, Monte Carlo simulation, and experimental investigation of the charge trapping component of BTI. An analytical model for both stress and recovery phases of BTI is presented. Furthermore, the model properly describes device behavior under periodic switching, also called AC-BTI or cyclostationary operation. The model is based on microscopic device physics parameters, which are shown to cause statistical variation in transistor BTI behavior. It is shown that a universal logarithmic law describes the time dependence of charge trapping in both stress and recovery phases, and that the time dependence may be separated from the temperature and bias point dependence. Analytical equations for the statistical parameters are provided. The model is compared with experimental data and Monte Carlo simulation results.