Electronic structure of divacancy–hydrogen complexes in silicon

Divacancy-hydrogen complexes (V2H and V2H2) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V2H2 is an acceptor, whereas...

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Published inJournal of physics. Condensed matter Vol. 15; no. 39; pp. S2809 - S2814
Main Authors Coutinho, J, Torres, V J B, Jones, R, Öberg, S, Briddon, P R
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 08.10.2003
Institute of Physics
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Summary:Divacancy-hydrogen complexes (V2H and V2H2) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V2H2 is an acceptor, whereas V2H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0953-8984
1361-648X
1361-648X
DOI:10.1088/0953-8984/15/39/005