Disordered GaSiP solid solution anodes with liquid metal phase for high-performance Li-ion batteries

[Display omitted] •Ternary GaSiP solid solution with a disordered lattice and liquid metallic phase is synthesized.•Ternary GaSiP presents ultrafast Li-ion and electronic conductivity.•Ternary GaSiP anode demonstrates excellent Li-storage performances. Silicon (Si) has become the most promising next...

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Published inElectrochemistry communications Vol. 155; p. 107566
Main Authors Liu, Xiao, Li, Yanhong, He, Wen, Xiong, Zhiqiang, Li, Weijian, Li, Yunyong, Li, Wenwu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2023
Elsevier
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Summary:[Display omitted] •Ternary GaSiP solid solution with a disordered lattice and liquid metallic phase is synthesized.•Ternary GaSiP presents ultrafast Li-ion and electronic conductivity.•Ternary GaSiP anode demonstrates excellent Li-storage performances. Silicon (Si) has become the most promising next-generation anode to replace commercial graphite for Li-ion batteries (LIBs) profiting from its large reversible capacity of 4,200 mA h g−1. However, its sluggish reaction kinetics and large volume effect need to be resolved. Herein, we prepare a ternary GaSiP solid solution with a disordered lattice by a facile mechanochemistry method. As anodes of LIBs, the GaSiP provides a reversible capacity of 1,527 mA h g−1 at 100 mA g−1 with an initial Coulombic efficiency (ICE) of 90.8% based on the reversible Li-storage mechanism integrated intercalation and subsequent conversion processes as confirmed by crystallography characterization and electrochemical measurements. Importantly, the GaSiP carbon composite presents a long cycling stability of maintaining 1,362 mA h g−1 after 50 cycles at 0.1 A g−1, and 75% capacity retention rate after 1,200 cycles at 2 A g−1, and a high-rate performance of remaining 440 mA h g−1 at 20 A g−1. Broadly, this work opens the door to develop ternary phosphides with disordered lattice and liquid metallic phase using for electrochemical energy conversion and storage.
ISSN:1388-2481
1873-1902
DOI:10.1016/j.elecom.2023.107566