Band alignment and defect states at SiC/oxide interfaces

Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk band-related) spectrum of electron states is established within less than 1 nn distance from the interface plane. The 1atter suggests an a...

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Published inJournal of physics. Condensed matter Vol. 16; no. 17; pp. S1839 - S1856
Main Authors Afanas’ev, V V, Ciobanu, F, Dimitrijev, S, Pensl, G, Stesmans, A
Format Journal Article
LanguageEnglish
Published IOP Publishing 05.05.2004
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Summary:Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk band-related) spectrum of electron states is established within less than 1 nn distance from the interface plane. The 1atter suggests an abrupt transition from semiconductor to insulator. However, a 1arge density of interface trap is observed in the oxidized SiC, which are mostly related to the clustering oelemental carbon during oxide growth and to the presence of defects in the near-interfacial oxides. Recent advancements in reducing the adverse effect o these traps suggest that the SiC oxidation technology has not reached its 1imit,, yet and fabrication of functional SiC/oxide interfaces is possible.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/16/17/019