Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cells

• Published in: Journal of non-crystalline solids Vol. 352; no. 9-20; pp. 896 - 900
• Main Authors: Jia, Haijun, Saha, Jhantu K., Ohse, Naoyuki, Shirai, Hajime
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2006; Elsevier
• Subjects: Applied sciences; Chemical vapor deposition; Conductivity; Cross-disciplinary physics: materials science; rheology; Crystal growth; Electron spin resonance; Ellipsometry; Energy; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microcrystallinity; Natural energy; Optical spectroscopy; Photoconductivity; Photovoltaic conversion; Physics; Plasma deposition; Raman scattering; Raman spectroscopy; Silicon; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; X-ray diffraction; Solar cells; Crystal growth; 52.70.Kz; Microcrystallinity; 81.05.Cy; Electron spin resonance; X-ray diffraction; Conductivity; 81.15.Gh; Raman spectroscopy; Chemical vapor deposition; Ellipsometry; Optical spectroscopy; Raman scattering; 84.60.Jt; Silicon; Photoconductivity; Plasma deposition; Raman spectra; Operating mode; Thin films; Defect density; Microwave radiation; Deposition rate; Crystallinity; Microcrystal

In this study, employing a high-density, low-temperature SiH4–H2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition...