Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cells

• Published in: Journal of non-crystalline solids Vol. 352; no. 9-20; pp. 896 - 900
• Main Authors: Jia, Haijun, Saha, Jhantu K., Ohse, Naoyuki, Shirai, Hajime
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2006; Elsevier
• Subjects: Applied sciences; Chemical vapor deposition; Conductivity; Cross-disciplinary physics: materials science; rheology; Crystal growth; Electron spin resonance; Ellipsometry; Energy; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microcrystallinity; Natural energy; Optical spectroscopy; Photoconductivity; Photovoltaic conversion; Physics; Plasma deposition; Raman scattering; Raman spectroscopy; Silicon; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; X-ray diffraction; Solar cells; Crystal growth; 52.70.Kz; Microcrystallinity; 81.05.Cy; Electron spin resonance; X-ray diffraction; Conductivity; 81.15.Gh; Raman spectroscopy; Chemical vapor deposition; Ellipsometry; Optical spectroscopy; Raman scattering; 84.60.Jt; Silicon; Photoconductivity; Plasma deposition; Raman spectra; Operating mode; Thin films; Defect density; Microwave radiation; Deposition rate; Crystallinity; Microcrystal
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2005.12.032

In this study, employing a high-density, low-temperature SiH4–H2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate of 65Å/s has been achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity of Xc>65% and a low defect density of (1–2)×1016cm−3 by adjusting source gas supply configuration and plasma conditions. A sufficient supply of deposition precursors, such as SiH3, as well as atomic hydrogen H on film growing surface is effective for the high-rate synthesis of highly crystallized μc-Si films, for the reduction in defect density, and for the improvement in film homogeneity and compactability. A preliminary result of p–i–n structure μc-Si thin-film solar cells using the resulting μc-Si films as an intrinsic absorption layer is presented.