Electrical and optical properties of CZTS thin films prepared by SILAR method

• Published in: Journal of Asian Ceramic Societies Vol. 4; no. 1; pp. 81 - 84
• Main Authors: Henry, J., Mohanraj, K., Sivakumar, G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2016; Taylor & Francis Group
• Subjects: Absorption; Chalcogenides; Semiconductors; Sol–gel; Thin films; Thin films; Chalcogenides; Absorption; Semiconductors; Sol–gel
• ISSN: 2187-0764; 2187-0764
• DOI: 10.1016/j.jascer.2015.12.003

In the present work, Cu2ZnSnS4 (CZTS) thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD) analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142nm. Scanning electron microscope (SEM) image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (104cm−1) in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10−2Ωcm at room temperature.