Crystal growth and luminescence properties of Yb2Si2O7 infra-red emission scintillator

• Published in: Optical materials Vol. 58; pp. 14 - 17
• Main Authors: Horiai, Takahiko, Kurosawa, Shunsuke, Murakami, Rikito, Pejchal, Jan, Yamaji, Akihiro, Shoji, Yasuhiro, Chani, Valery I., Ohashi, Yuji, Kamada, Kei, Yokota, Yuui, Yoshikawa, Akira
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2016
• Subjects: Charge transfer; Infra-red; Pyrosilicate; Scintillator; Single crystal; Scintillator; Infra-red; Pyrosilicate; Charge transfer; Single crystal
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2016.04.032

(CexYb1−x)2Si2O7 (x = 0.00, 0.01) single crystals were grown by the micro-pulling-down method to test the possibility of its application as infra-red scintillator for medical imaging. Powder X-ray diffraction analysis indicated that the crystals were single-phase materials. The radioluminescence spectra of the crystals demonstrated presence of two near infra-red emission peaks (at 1010 and 1030 nm). The emission peaks at 420 and 580 nm ascribed to defects were also observed in the crystals. The human body has maximum transmission in wavelength range from 650 to 1200 nm. Therefore, Yb2Si2O7 is expected to be used as efficient infra-red scintillator for medical applications. •Optical properties of undoped and Ce-doped Yb2Si2O7 scintillators were investigated.•These crystals were grown by the micro-pulling-down method.•Near infra-red emissions was for these samples observed excited by X-rays.•The Near infra-red emissions was originated from Yb3+ 4f–4f transition.