Optical and field emission properties of layer-structure GaN nanowires

[Display omitted] •The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method.•The diameter of the layer-structure GaN nanowire gradually decreases from ∼500nm to ∼200nm along the wire axis.•The layer-structure GaN nanowire film possesse...

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Bibliographic Details
Published inMaterials research bulletin Vol. 56; pp. 80 - 85
Main Authors Cui, Zhen, Li, Enling, Shi, Wei, Ma, Deming
Format Journal Article
LanguageEnglish
Published United States Elsevier Ltd 01.08.2014
Subjects
A. Nanostructures
A. Optical materials
B. Crystal growth
C. X-ray diffraction
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRON EMISSION
EMISSION SPECTRA
FIELD EMISSION
GALLIUM NITRIDES
LAYERS
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE RADIATION
X-RAY DIFFRACTION
A. Nanostructures
B. Crystal growth
C. X-ray diffraction
A. Optical materials
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Summary:[Display omitted] •The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method.•The diameter of the layer-structure GaN nanowire gradually decreases from ∼500nm to ∼200nm along the wire axis.•The layer-structure GaN nanowire film possesses good field emission property. A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (111) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [001] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2014.04.014