Intensive light emission from SiCN films by reactive RF magnetron sputtering

Silicon carbonitride (SiCN) films were deposited by radio-frequency reactive sputtering and then annealed at 750 °C in nitrogen atmosphere. The as-deposited film did not show photoluminescence, whereas strong photoluminescent (PL) peaks appeared at 358 nm, 451 nm and 468 nm after annealing. Transmis...

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Bibliographic Details
Published inMaterials chemistry and physics Vol. 103; no. 2; pp. 456 - 460
Main Authors Du, X.-W., Fu, Y., Sun, J., Yao, P., Cui, L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.06.2007
Subjects
Carbon nitride
Photoluminescence gap
Sputtering
XPS
XPS
Photoluminescence gap
Sputtering
Carbon nitride
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Summary:Silicon carbonitride (SiCN) films were deposited by radio-frequency reactive sputtering and then annealed at 750 °C in nitrogen atmosphere. The as-deposited film did not show photoluminescence, whereas strong photoluminescent (PL) peaks appeared at 358 nm, 451 nm and 468 nm after annealing. Transmission electron microscope (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results show the enhancement of PL properties is due to the change of chemical bonds. The PL peak at 358 nm is attributed to defects in Si–O network, while peaks at 451 nm and 468 nm are related to the formation of carbon sp 2 bonds.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2007.02.053