Effect of doping location on photoconductive spectrum of SiGe quantum dots
Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample with doping in the silicon barrier has much larger response than the sample in which the doping was placed in the wetting layer, i.e. in the s...
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Published in | Physica status solidi. A, Applications and materials science Vol. 204; no. 2; pp. 477 - 482 |
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Berlin
WILEY-VCH Verlag
01.02.2007
WILEY‐VCH Verlag Wiley-VCH Wiley |
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Abstract | Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample with doping in the silicon barrier has much larger response than the sample in which the doping was placed in the wetting layer, i.e. in the self assembled dots. This is due to the penetration of the wave‐function into the barrier in the first structure, as shown by the 1‐D simulation. Several peaks in the infrared were observed, ranging from 70 to 220 meV, associated with inter‐level transitions of holes in the valance band of the dot or the wetting layer. The overall spectra and the relative intensity of the various peaks change drastically with bias magnitude and polarity. The PC signals increase super‐linearly with bias, indicating that the carriers are released into the quasi‐continuum through tunneling. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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AbstractList | Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample with doping in the silicon barrier has much larger response than the sample in which the doping was placed in the wetting layer, i.e. in the self assembled dots. This is due to the penetration of the wave‐function into the barrier in the first structure, as shown by the 1‐D simulation. Several peaks in the infrared were observed, ranging from 70 to 220 meV, associated with inter‐level transitions of holes in the valance band of the dot or the wetting layer. The overall spectra and the relative intensity of the various peaks change drastically with bias magnitude and polarity. The PC signals increase super‐linearly with bias, indicating that the carriers are released into the quasi‐continuum through tunneling. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Abstract Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample with doping in the silicon barrier has much larger response than the sample in which the doping was placed in the wetting layer, i.e. in the self assembled dots. This is due to the penetration of the wave‐function into the barrier in the first structure, as shown by the 1‐D simulation. Several peaks in the infrared were observed, ranging from 70 to 220 meV, associated with inter‐level transitions of holes in the valance band of the dot or the wetting layer. The overall spectra and the relative intensity of the various peaks change drastically with bias magnitude and polarity. The PC signals increase super‐linearly with bias, indicating that the carriers are released into the quasi‐continuum through tunneling. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
Author | Le Thanh, V. Finkman, E. Vardi, A. Schacham, S. E. |
Author_xml | – sequence: 1 givenname: S. E. surname: Schacham fullname: Schacham, S. E. organization: Dept. of Electrical and Electronic Eng., College of Judea and Samaria, Ariel 44837, Israel – sequence: 2 givenname: A. surname: Vardi fullname: Vardi, A. organization: Dept. of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel – sequence: 3 givenname: V. surname: Le Thanh fullname: Le Thanh, V. organization: Institut d'Électronique Fondamentale UMR CNRS 8622 - Université Paris XI, 91405 Orsay, France – sequence: 4 givenname: E. surname: Finkman fullname: Finkman, E. email: finkman@ee.technion.ac.il organization: Dept. of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel |
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Keywords | Continuum Wetting Quantum dots Ge-Si alloys Doping Tunnel effect One dimensional model Wave functions Self-assembled layers Photoconductivity |
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Snippet | Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample... Abstract Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The... |
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SubjectTerms | 73.21.La 73.50.Pz 73.63.Kv 85.35.Be Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots |
Title | Effect of doping location on photoconductive spectrum of SiGe quantum dots |
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