Indium gallium arsenide microwave power transistors

• Published in: IEEE transactions on microwave theory and techniques Vol. 39; no. 7; pp. 1069 - 1075
• Main Authors: Johnson, G.A., Kapoor, V.J., Shokrani, M., Messick, L.J., Nguyen, R., Stall, R.A., McKee, M.A.
• Format: Journal Article
• Language: English
• Published: Legacy CDMS IEEE 01.07.1991; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Electronics And Electrical Engineering; Exact sciences and technology; Indium gallium arsenide; Microwave devices; MISFETs; Other multijunction devices. Power transistors. Thyristors; Plasma devices; Plasma properties; Power generation; Power transistors; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Stability; Field effect transistor; Microelectronic fabrication; Gallium Indium Arsenides Mixed; Ion implantation; Depletion; Voltage current curve; Microwave; Experimental study; Gain; Power transistor
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.85371

Depletion-mode InGaAs microwave power MISFETs with 1- mu m gate lengths and up to 1-mm gate widths have been fabricated using an ion-implanted process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The DC current-voltage (I-V) characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, the first report of RF output stability of InGaAs MISFETs over 24 h period is also presented. An output power stability within 1.2% over 24 h of continuous operation was achieved. In addition, a drain current drift of 4% over 10/sup 4/ s was obtained.< >