Metallization of the potassium overlayer on the β-SiC(100) c(4 × 2) surface
We present new data on the potassium-induced semiconducting to metallic transition of the silicon-terminated β-SiC(100) c(4 × 2) surface, resulting from density functional theory simulations. We have analysed many different SiC(100)-K surface topologies, corresponding to K coverages ranging from 0.0...
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Published in | Journal of physics. Condensed matter Vol. 24; no. 48; p. 485001 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
05.12.2012
Institute of Physics |
Subjects | |
Online Access | Get full text |
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Summary: | We present new data on the potassium-induced semiconducting to metallic transition of the silicon-terminated β-SiC(100) c(4 × 2) surface, resulting from density functional theory simulations. We have analysed many different SiC(100)-K surface topologies, corresponding to K coverages ranging from 0.08 to 1.25 monolayers (ML), paying special attention to the 2/3 ML and 1 ML cases where a metal-insulator transition has been reported to occur. We find that the SiC(100)-K surface is metallic in all the cases. In spite of that, the potassium layer shows a very low density of states in the semiconductor gap up to potassium coverages of ∼1 ML, beyond which the potassium layer undergoes a transition to metallic behaviour, explaining the experimental observation. We propose a new atomic model for the surface reconstruction of the 1 ML case which is lower in total energy than the previously suggested model based on linear potassium chains. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0953-8984 1361-648X |
DOI: | 10.1088/0953-8984/24/48/485001 |