Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Al 2 O 3 ) Abrasive

• Published in: Materials Vol. 17; no. 3; p. 679
• Main Authors: Gong, Juntao, Wang, Weilei, Liu, Weili, Song, Zhitang
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 31.01.2024
• Subjects: Alumina; Aluminum oxide; Chemical-mechanical polishing; CMP; Experiments; Heat conductivity; Lasers; Manganese dioxide; Material removal rate (machining); Morphology; Parameters; Particle size; Performance evaluation; polishing mechanism; Scanning electron microscopy; Semiconductor materials; SiC; Silicon carbide; Silicon substrates; Spectrum analysis; Surface roughness; United Kingdom > UK; Japan; alumina; polishing mechanism; SiC; CMP
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma17030679

Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, MnO2 adsorbed on the Al2O3, which explains the polishing mechanism of Al2O3 in the slurry.