High-resolution analytical electron microscopy of catalytically etched silicon nanowires

• Published in: Applied physics. A, Materials science & processing Vol. 95; no. 2; pp. 325 - 327
• Main Authors: Schade, M., Geyer, N., Fuhrmann, B., Heyroth, F., Leipner, H. S.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 01.05.2009; Springer
• Subjects: Arrays; Catalysis; Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: structure, mechanical and thermal properties; Electron microscopy; Etching; Exact sciences and technology; Lithography; Machines; Manufacturing; Mathematical analysis; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanotechnology; Nanowires; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Rapid Communication; Silicon; Structure of solids and liquids; crystallography; Surfaces and Interfaces; Thin Films; 68.37.Ma; 61.46.Km; 82.45.Vp; Analytical electron microscopy; Wet process; Transmission electron microscopy; Lithography; Plasma etching; Vertical alignment; Silicon; Nanowires; Scanning transmission electron microscopy; Microstructure
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-009-5101-x

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiO x with x ≤2.